Smart integrated semiconductor light emitting system including nitride based light emitting diodes (LED) and application specific integrated circuits (ASIC)

ABSTRACT

A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part of Ser. No. 12/540,523, filedon Aug. 13, 2009, U.S. Pat. No. 8,084,780 B2.

BACKGROUND

This disclosure relates generally to light emitting diodes (LED) andmore particularly to systems incorporating light emitting diodes (LEDs).

Light emitting diodes (LEDs) are used in a wide range of electronicdevices such as displays, communication devices, and lamps. Advances inLED technology have improved the efficiency and service life of lightemitting diodes (LEDs), and have made them smaller and lighter. However,most advances have been directed to the structure and function of thelight emitting diodes (LEDs), rather than the associated LED systems.Light emitting diodes (LEDs) are typically part of a LED system thatincludes driver circuitry and associated electronic devices such asresistors, capacitors, diodes and circuit boards.

FIG. 1 illustrates a prior art LED circuit 10. The prior art LED system10 includes a LED driver IC 12, and two light emitting diode (LED) chips14 in electrical communication with the LED driver IC chip 12. The LEDdriver IC 12 is configured to provide driver and functionality circuitsfor the light emitting diode (LED) chips 14. The LED driver IC 12includes a VIN pin, a SEN pin, a DIM pin, a SW pin and a GND pin. TheLED system 10 also includes various electronic components includingresistors, capacitors, a Schottky diode, and an inductor configuredsubstantially as shown. The LED system 10 requires a relatively complexmanufacturing process to mount and interconnect all of the electronicelements. In addition, relatively large amounts of current and power arerequired to drive the electronic elements, which generates a largeamount of heat.

In view of the foregoing, improved LED systems are needed in the art,which are more efficient than prior art LED systems. However, theforegoing examples of the related art and limitations related therewith,are intended to be illustrative and not exclusive. Other limitations ofthe related art will become apparent to those of skill in the art upon areading of the specification and a study of the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments are illustrated in the referenced figures of thedrawings. It is intended that the embodiments and the figures disclosedherein are to be considered illustrative rather than limiting.

FIG. 1 is an electrical schematic diagram of a prior art LED system;

FIG. 2 is a schematic plan view of a LED system having integratedcomponents and smart functionality;

FIG. 3 is a schematic plan view of the LED system having additionalfunctionality built into a semiconductor substrate;

FIG. 4 is a schematic bottom view of the LED system showing circuitry onthe substrate;

FIG. 5 is a schematic plan view of the LED system equivalent to FIG. 2;

FIG. 5A is a schematic side elevation view of FIG. 5 illustrating afirst mounting arrangement for an application specific integratedcircuit (ASIC) and (LED) chip on the substrate;

FIG. 5B is a schematic side elevation view of FIG. 5 illustrating asecond mounting arrangement for an application specific integratedcircuit (ASIC) and (LED) chip on the substrate;

FIG. 6 is a schematic plan view of the LED system having additionalfunctionality equivalent to FIG. 3;

FIG. 6A is a schematic side elevation view of FIG. 6 illustrating afirst mounting arrangement for an application specific integratedcircuit (ASIC) and (LED) chip on the substrate;

FIG. 6B is a schematic side elevation view of FIG. 6 illustrating asecond mounting arrangement for an application specific integratedcircuit (ASIC) and (LED) chip on the substrate;

FIG. 7 is a schematic plan view of the LED system equivalent to FIG. 2or FIG. 3;

FIG. 7A is a schematic electrical diagram of the LED system of FIG. 7;

FIG. 8 is a schematic plan view of the LED system having multiple LEDchips electrically connected in series;

FIG. 8A is a schematic electrical diagram of the LED system of FIG. 8;

FIG. 9 is a schematic plan view of the LED system having multiple LEDchips electrically connected in parallel;

FIG. 9A is a schematic electrical diagram of the LED system of FIG. 9;

FIG. 10 is an electrical schematic diagram of the application specificintegrated circuit (ASIC) of the LED system;

FIG. 10A is an electrical schematic diagram of a first outputconfiguration of the application specific integrated circuit (ASIC) ofthe LED system;

FIG. 10B is an electrical schematic diagram of a second outputconfiguration of the application specific integrated circuit (ASIC) ofthe LED system;

FIG. 11A is a schematic cross sectional view a first encapsulatedpackage for the LED system;

FIG. 11B is a schematic cross sectional view a second encapsulatedpackage for the LED system;

FIG. 11C is a schematic cross sectional view a third encapsulatedpackage for the LED system;

FIG. 12 is an electrical schematic diagram of a LED integrated circuitformed by the LED system; and

FIG. 13 is a schematic cross sectional view of a light emitting diode(LED) of the LED system.

DETAILED DESCRIPTION

Referring to FIG. 2, a LED system 30 includes a substrate 32, a lightemitting diode (LED) 34 mounted to the substrate 32, and an applicationspecific integrated circuit (ASIC) die 36 mounted to the substrate 32 inelectrical communication with the light emitting diode (LED) 34.Although the LED system 30 includes only one application specificintegrated circuit (ASIC) die 36, it is to be understood that the LEDsystem can include a plurality of application specific integratedcircuit (ASIC) dice 36. The substrate 32 functions as a mountingsubstrate, and also provides functionality for operating the lightemitting diode (LED) 34 and the application specific integrated circuit(ASIC) die 36 as an integrated assembly. The light emitting diode (LED)34 can comprise a conventional LED fabricated using known processes.Suitable light emitting diodes (LEDs) are commercially available fromSEMILEDS, INC. located in Boise, Id., and Miao-Li County, Taiwan, R.O.C.The application specific integrated circuit (ASIC) die 36 can comprise asemiconductor die having application specific integrated circuits 38formed therein.

The light emitting diode (LED) 34 can comprise a Group-III nitride basedmaterial such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al)N-based materials. In addition, the doped and active layers of the lightemitting diode (LED) 34 can be formed on a carrier substrate made of asuitable material such as silicon (Si), silicon carbide (SiC) orsapphire (Al₂O₃). For example, SEMILEDS, INC. manufactures ultra thinvertical light emitting diodes (VLED) under the trademark MvpLED™. U.S.Pat. No. 7,723,718, entitled “Epitaxial Structure For Metal Devices”,which is incorporated herein be reference, discloses methods forfabricating vertical light emitting diodes (VLED).

Referring to FIG. 13, the light emitting diode (LED) 34 is shownseparately. However, it is to be understood that this configuration forthe light emitting diode (LED) 34 is merely exemplary, and otherconfigurations can be employed. The light emitting diode (LED) 34includes a device substrate 72, a vertical light emitting diode (VLED)die 74 mounted to the device substrate 74, and an electricallyinsulating, light transmissive passivation layer 76 which encapsulatesthe light emitting diode (VLED) die 74. For illustrative purposes inFIG. 13, the light emitting diode (LED) 34 is shown with only onevertical light emitting diode (VLED) die 74 mounted to the devicesubstrate 74. However, in actual practice the light emitting diode (LED)34 can include a plurality of vertical light emitting diode (VLED) dice74 mounted to the device substrate 72, and arranged in a desired arrayto form an optoelectronic device, such as an LED display. The devicesubstrate 72 can comprise a semiconductor material, such as silicon(Si), or another material, such GaAs, SiC, AlN, Al₂O₃, or sapphire. Thedevice substrate 72 can include a cavity 78 wherein the vertical lightemitting diode (VLED) die 74 is mounted, and a back side 80. Anelectrically conductive die attach layer 82 can be used to attach thevertical light emitting diode (VLED) die 74 to the substrate 72.

Still referring to FIG. 13, the vertical light emitting diode (VLED) die74 can be fabricated as disclosed in U.S. application Ser. No.12/983,436 entitled “Vertical Light Emitting Diode (VLED) Die And MethodOf Fabrication”, which is incorporated herein by reference. The verticallight emitting diode (VLED) die 74 includes a first metal 84; a secondmetal 86; a p-type semiconductor layer 88 on the first metal 84; amultiple quantum well (MQW) layer 90 on the p-type semiconductor layer88; and an n-type semiconductor layer 92 on the multiple quantum well(MQW) layer 90. A preferred material for the p-type semiconductor layer88 comprises p-GaN. Other suitable materials for the p-typesemiconductor layer 88 include AlGaN, InGaN and AlInGaN. A preferredmaterial for the n-type semiconductor layer 92 comprises p-GaN. Othersuitable materials for the n-type semiconductor layer 92 include AlGaN,InGaN and AlInGaN. The multiple quantum well (MQW) layer 90 can comprisea semiconductor material, such as GaAs, sandwiched between two layers ofa semiconductor material, such as AlAs having a wider bandgap. Wirebonded wires 94 electrically connect the n-type semiconductor layer 92to electrodes on the substrate 72 and the vertical light emitting diode(VLED) die 74.

Referring again to FIG. 2, the substrate 32 includes a front side(circuit side) having conductors 40 formed thereon, which electricallyconnect the application specific integrated circuit (ASIC) die 36 to thelight emitting diode (LED) 34. As will be further explained, theapplication specific integrated circuit (ASIC) die 36 and the lightemitting diode (LED) 34 can be mounted to the substrate using a suitabletechnique such as flip chip or C4 bonding. The substrate 32 can comprisesilicon, or another semiconductor material such as gallium arsenide, andthe conductors 40 can be fabricated using well known semiconductorfabrication processes. As another example, the substrate 32 can comprisesilicon carbide (SiC) or sapphire (Al₂O₃). Alternately, the substrate 32can comprise a ceramic material, a printed circuit board (PCB) material,a metal core printed circuit board (PCB), an FR-4 printed circuit board(PCB), a metal lead frame, an organic lead frame, a silicon submountsubstrate, or any packaging substrate used in the art.

The substrate 32 can have any polygonal shape (e.g., square,rectangular) and any suitable size. In addition, the substrate 32 can bedie-sized, such that the LED system 30 has a chip scale size similar tothat of a chip scale package (CSP) or a system on a chip (COS).Alternately, the substrate 32 can be wafer sized such that a wafer scalesystem is provided.

Referring to FIG. 3, an alternate embodiment LED system 30A issubstantially similar to the LED system 30 (FIG. 2), but includes asubstrate 32A configured to provide additional electrical functionality.In particular, the substrate 32A comprises a semiconductor materialhaving a segment 42 formed with application specific integrated circuits(ASICs) 44 configured to perform additional electrical functions. Theapplication specific integrated circuits (ASICs) 44 can includesemiconductor components, circuits, and base materials integrated intothe substrate 32A. For example, the application specific integratedcircuits (ASICs) 44 can include resistors, diodes (p-n), capacitors,gates, metal-oxide field effect transistors (MOSFET), and flip flops.The application specific integrated circuits (ASICs) 44 can be combinedwith the integrated circuits in the application specific integratedcircuit (ASIC) die 36 to provide smart on-board control of the lightemitting diode (LED) 34.

The semiconductor substrate 32A can comprise a portion of asemiconductor wafer having the application specific integrated circuits(ASICs) 44 formed therein using conventional semiconductor fabricationtechniques such as implanting, photopatterning. The light emitting diode(LED) 34 can be mounted to a blank portion of the substrate 32A spacedfrom the application specific integrated circuits (ASICs) 44, andelectrically connected to the application specific integrated circuits(ASICs) 44 using suitable connecting elements and interconnects.

As shown in FIG. 4, the substrate 32 or 32A includes a back side 48having an array of contacts 46 in electrical communication with theapplication specific integrated circuit (ASIC) die 36 (FIG. 2), and withthe application specific integrated circuits (ASICs) 44 (FIG. 3). Thecontacts 46 function as the terminal contacts for connecting the LEDsystem 30 (FIG. 2) or 30A (FIG. 3) to the outside world including otherelectronic devices and circuitry. The contacts 46 can comprise bumps orpads made of a bondable material such as solder, metal or a conductivepolymer, configured for bonding to corresponding electrodes on a modulesubstrate, circuit board or other support substrate. In addition, thecontacts 46 can be arranged in a suitable dense area array, such as aball grid array (BGA) or fine ball grid array (FBGA). Further, thecontacts 46 can be electrically connected to the application specificintegrated circuit (ASIC) die 36 (FIG. 2) and to the applicationspecific integrated circuits (ASICs) 44 (FIG. 3) using suitableelements, such as interconnects, conductive traces, redistributionconductors and conductive vias formed on the substrate 32 or 32A.

The contacts 46 can be configured to integrate and expand the electricalfunctions of the application specific integrated circuit (ASIC) die 36(FIG. 2), the application specific integrated circuits (ASICs) 44 (FIG.3), and the light emitting diode (LED) 34 (FIG. 2), and to provide smartcontrol for the LED system 30 (FIG. 2) or 30A (FIG. 3). For example, thecontacts 44 can be configured as: a.) multi purpose input-output ports;b.) power inputs (AC or DC) for driving the LED system 30 or 30A; c.)dimming control ports; d.) current setting ports; e.) feedback sensorports; f.) communication ports; and g.) common ground ports. Inaddition, the application specific integrated circuits (ASICs) 44 (FIG.3), and the light emitting diode (LED) 34 (FIG. 2) form an integratedLED circuit.

Referring to FIGS. 5, 5A and 5B, an exemplary mounting arrangement formounting the light emitting diode (LED) 34 and the application specificintegrated circuit (ASIC) die 36 to the substrate 32 in LED system 30are illustrated. In FIG. 5A, the LED chip 34 has a p-, n-same sideconfiguration and is mounted in a chip-on-board (COB) configurationusing interconnects 50, and a flip chip bonding method such as C4(controlled collapse chip connection). Similarly, the applicationspecific integrated circuit (ASIC) die 36 includes interconnects 52 andis flip chip mounted to the substrate 32 in a chip on boardconfiguration. In FIG. 5B, the LED chip 34 has a p-, n-different sideconfiguration and is mounted to the substrate 32 using a die attachbonding layer 54 (e.g., solder, silver epoxy), and a wire bonded wire 56bonded to contacts on the LED chip 34 and the substrate 32.

Referring to FIGS. 6, 6A and 6B, an exemplary mounting arrangement formounting the light emitting diode (LED) 34 and the application specificintegrated circuit (ASIC) die 36 to the substrate 32A in LED system 30Aare illustrated. In FIG. 6A, the LED chip 34 has a p-, n-same sideconfiguration and is mounted in a chip-on-board (COB) configurationusing interconnects 50, and a flip chip bonding method such as C4(controlled collapse chip connection). The application specificintegrated circuit (ASIC) die 36 can be flip chip mounted to theapplication specific integrated circuits 44 on the substrate 32A in achip on board configuration substantially as previously described. InFIG. 6B, the LED chip 34 has a p-, n-different side configuration and ismounted to the substrate 32A using a die attach bonding layer 54 (e.g.,solder, silver epoxy), and a wire bonded wire 56 bonded to contacts onthe LED chip 34 and the substrate 32A.

Referring to FIGS. 7 and 7A, an exemplary electrical configuration forthe application specific integrated circuit (ASIC) die 36 and the lightemitting diode (LED) 34 for the LED system 30 or 30A are illustrated. Asshown in FIG. 7A, the light emitting diode (LED) 34 can be electricallyconnected via the conductors 40 to ground pins on the applicationspecific integrated circuit (ASIC) die 36. Alternately, the lightemitting diode (LED) 34 can be connected to a dedicated ground pin onthe substrate 32 or 32A.

Referring to FIGS. 8 and 8A, the LED system 30 or 30A can also includemultiple light emitting diodes (LEDs) 34A-34D mounted directly to thesubstrate 32 or 32A. The light emitting diodes (LEDs) 34A-34D can all beconfigured to produce the same wavelengths and colors of light (e.g.,red, green, blue, white, UV, laser, IR), or can be configured to producedifferent combinations thereof. For example, a first light emittingdiode (LED) 34A can produce white light, a second light emitting diode(LED) 34B can produce green light, a third light emitting diode (LED)34C can produce blue light, and a fourth light emitting diode (LED) 34Dcan produce red light. In addition, the application specific integratedcircuit (ASIC) die 36, and the application specific integrated circuits44 (FIG. 3) can be adapted to provide smart color control for the lightemitting diodes (LEDs) 34A-34D. As shown in FIG. 8A, the light emittingdiodes (LEDs) 34A-34D can be electrically connected in series andgrounded to ground pins on the application specific integrated circuit(ASIC) die 36. Alternately, the light emitting diodes (LEDs) 34A-34D canbe connected to a dedicated ground pin on the substrate 32 or 32A.

Referring to FIGS. 9 and 9A, the LED system 30 or 30A can also includemultiple light emitting diodes (LEDs) 34A-34D electrically connected inparallel. As another alternative, the light emitting diodes (LEDs)34A-34D can be electrically connected in multiple parallel strings witheach string containing a plurality of light emitting diodes (LEDs) 34connected in series.

Referring to FIGS. 10, 10A and 10B, electrical characteristics of theLED system 30 or 30A are illustrated. FIG. 10 illustrates aninput/output configuration 44 for the application specific integratedcircuit (ASIC) die 36. In general, the input/output configuration andthe application specific integrated circuits of the application specificintegrated circuit (ASIC) die 36 are configured to integrate the lightemitting diode 34 and the application specific integrated circuit (ASIC)die 36 into an integrated assembly. FIG. 10A illustrates an outputconfiguration for the application specific integrated circuit (ASIC) die36 with a string of light emitting diodes (LED) 34 electricallyconnected in series to ground. FIG. 10B illustrates an outputconfiguration for the application specific integrated circuit (ASIC) die36 with a single light emitting diode (LED) 34 electrically connected toground.

Table 1 describes the input port configuration for the applicationspecific integrated circuit (ASIC) die 36.

TABLE 1 INPUT PORT CONFIGURATION PORT PORT DESCRIPTION Vin Power Sourceinput for LED Systems. Power input is enable for: a) DC Voltage Range1.5 VDC-60 VDAC a) AC Voltage Range 90 VAC-264 VAC/50 Hz-60 Hz DIM Thisis dimming input control port. Dimming is allowed from 0% to 100%brightness. Allow dimming type: a) OVDC to 10 VDC Type Method b) PulseWidth Modulation c) Convention Triac Dimmer SEN This port has 2functions SPI EN 1) Constant Current Output to LED setting. 2) EnableSerial Write to Flash/ROM for White Balance Setting SW This port is touse for Soft Turn ON/OFF purpose A/D This port has 2 functions: SPI 1)Multi-purpose A/D When SPI En is disable, A/D port function will beenable 2) SPI When SPI EN Port is Enable, LED Brightness Tuning/WhiteBalance Parameter can be burn into Flash/ROM GDN Common

Some features of LED system 30 or 30A include:

-   -   Adjustable LED (load) current    -   LED Output port current can be scaled to multiple ratio for the        purpose of:        -   White Balancing (for White or RGB applications) or White            Color Coordinate Tuning        -   Brightness Calibration    -   Soft Turn On-Off    -   Dimmable        -   Dimming—PWM        -   Dimming—0-10V        -   Dimming—TRAC    -   Failsafe System        -   Build in Safety Protection        -   Over Temperature when Tj>150° C.        -   Over Voltage/Overload        -   Under voltage lockout        -   Reverse polarity protection

Referring to FIGS. 11A-11C, different packaging configurations for theLED system 30 or 30A are illustrated. In FIG. 11A, an LED package 58Aincludes the substrate 32 or 32A, the application specific integratedcircuit (ASIC) die 36, and the light emitting diode (LED) 34,substantially as previously described. In addition, the light emittingdiode (LED) 34 can include a phosphor layer 60 for producing whitelight. The LED package 58A also includes a polymer lens 66 on thesubstrate 32 or 32A, which encapsulates the LED system 30 or 30A. Thepolymer lens 66 can comprise a suitable polymer such as epoxy formed bymolding or other suitable process.

In FIG. 11B, an LED package 58B includes the substrate 32 or 32A, theapplication specific integrated circuit (ASIC) die 36, and the lightemitting diode (LED) 34, substantially as previously described. The LEDpackage 58A also includes a polymer lens 66 on the substrate 32 or 32Awhich encapsulates the LED system 30 or 30A. In this embodiment, thepolymer lens 66 also includes a phosphor layer 62 for producing whitelight.

In FIG. 11C, an LED package 58C includes the substrate 32 or 32A, theapplication specific integrated circuit (ASIC) die 36, and the lightemitting diode (LED) 34, substantially as previously described. In thisembodiment, the substrate 32 or 32A also includes a reflective recess 64wherein the application specific integrated circuit (ASIC) die 36, andthe light emitting diode (LED) 34 are mounted.

Referring to FIG. 12 an electrical schematic of an LED integratedcircuit 68 formed by the LED system 30 or 30A is illustrated. The LEDintegrated circuit 68 includes the contacts 46 on the substrate 32 or32A. The LED integrated circuit 68 can also include the applicationspecific integrated circuits 44 on the substrate 32A. The LED integratedcircuit 68 also includes the application specific integrated circuits 38in the application specific integrated circuit (ASIC) die 36. The LEDintegrated circuit 68 also includes the light emitting diode 34. Becausethe LED integrated circuit 68 has integrated elements power consumptionand heat generation are less than with the prior art LED circuit 10(FIG. 1). In addition, the LED system 30 or 30A can be made smaller suchthat a chip scale system can be provided.

Thus the disclosure describes improved LED systems. While a number ofexemplary aspects and embodiments have been discussed above, those ofskill in the art will recognize certain modifications, permutations,additions and subcombinations thereof. It is therefore intended that thefollowing appended claims and claims hereafter introduced areinterpreted to include all such modifications, permutations, additionsand sub-combinations as are within their true spirit and scope.

What is claimed is:
 1. A light emitting diode (LED) system comprising: asemiconductor substrate comprising a plurality of external contacts; oneor more application specific integrated circuits (ASIC) comprising atleast one semiconductor component integrated in the semiconductorsubstrate in electrical communication with the external contacts and adie on the semiconductor substrate in electrical communication with theapplication specific integrated circuits (ASIC); and at least one lightemitting diode (LED) on the semiconductor substrate in electricalcommunication with the die; the semiconductor substrate, the externalcontacts, the application specific integrated circuits (ASIC) and thelight emitting diode (LED) configured as an integrated LED circuit, withthe external contacts configured as multi-purpose input-output portsconfigured to control electrical functions of the application specificintegrated circuits (ASIC), the die, and the light emitting diode (LED)including power input, dimming control, current setting, feedbacksensing, communication and common ground.
 2. The system of claim 1wherein the semiconductor component comprises an element selected fromthe group consisting of resistors, diodes, capacitors, gates,metal-oxide field effect transistors (MOSFET) and flip flops.
 3. Thesystem of claim 1 wherein the die comprises an application specificintegrated circuits (ASIC) die.
 4. The system of claim 1 wherein thesemiconductor substrate comprises a portion of a semiconductor wafer andthe die is mounted to a blank portion of the semiconductor substrate. 5.The system of claim 1 wherein the light emitting diode (LED) comprises aGroup-III nitride based material.
 6. The system of claim 1 wherein thesemiconductor substrate comprises Si.
 7. A light emitting diode (LED)system comprising: a semiconductor substrate comprising at least oneintegrated semiconductor component and a plurality of external contactsin electrical communication with the semiconductor component; at leastone application specific integrated circuit (ASIC) die on thesemiconductor substrate having a plurality of integrated circuits; atleast one light emitting diode (LED) on the semiconductor substrate inelectrical communication with the application specific integratedcircuit (ASIC) die comprising a Group-III nitride based material; thesemiconductor substrate, the external contacts and the integratedcircuits configured to integrate the application specific integratedcircuit (ASIC) die and the light emitting diode (LED) into an integratedLED circuit, with the external contacts configured as multi-purposeinput-output ports configured to control electrical functions of theapplication specific integrated circuit (ASIC) die, the integratedcircuits and the light emitting diode (LED) including power input,dimming control, current setting, feedback sensing, communication andcommon ground.
 8. The system of claim 7 wherein the Group-III nitridebased material comprises a material selected from the group consistingof GaN, InGaN, AlGaN and AlInGaN.
 9. The system of claim 7 wherein thesemiconductor substrate comprises Si.
 10. The system of claim 7 whereinthe light emitting diode (LED) comprises a vertical light emitting diode(VLED) die.
 11. The system of claim 7 wherein the light emitting diode(LED) includes a device substrate comprising a material selected fromthe group consisting of Si, GaAs, SiC, AlN, Al₂O₃, and sapphire.
 12. Thesystem of claim 7 wherein the Group-III nitride based material comprisesGaN and the device substrate comprises SiC.
 13. The system of claim 7wherein the application specific integrated circuit (ASIC) die comprisesa plurality of dice.
 14. A light emitting diode (LED) system comprising:a semiconductor substrate comprising a plurality of integratedsemiconductor components and a plurality of external contacts inelectrical communication with the semiconductor components configured asterminal contacts for electrically connecting the system to an outsideworld, the semiconductor components comprising an element selected fromthe group consisting of resistors, diodes, capacitors, gates,metal-oxide field effect transistors (MOSFET) and flip flops; anapplication specific integrated circuit (ASIC) die on the semiconductorsubstrate having a plurality of input ports in electrical communicationwith the semiconductor devices and the external contacts, a plurality ofintegrated circuits in electrical communication with the input ports,and at least one output port in electrical communication with theintegrated circuits; at least one light emitting diode (LED) mounted tothe semiconductor substrate in electrical communication with the outputport comprising a Group-III nitride based material; the semiconductorsubstrate, the external contacts, the semiconductor components on thesemiconductor substrate, and the integrated circuits on the applicationspecific integrated circuit (ASIC) die configured to form an integratedLED circuit configured to transmit input from the outside world to theapplication specific integrated circuit (ASIC) die, with the externalcontacts configured as multi-purpose input-output ports configured tocontrol electrical functions of the application specific integratedcircuit (ASIC) die, the integrated circuits and the light emitting diode(LED) including power input, dimming control, current setting, feedbacksensing, communication and common ground.
 15. The system of claim 14wherein the Group-III nitride based material comprises a materialselected from the group consisting of GaN, InGaN, AlGaN and AlInGaN. 16.The system of claim 14 wherein the light emitting diode (LED) comprisesa vertical light emitting diode (VLED) die.
 17. The system of claim 14wherein the light emitting diode (LED) includes a device substratecomprising a material selected from the group consisting of Si, GaAs,SiC, AlN, Al₂O₃, and sapphire.
 18. The system of claim 14 wherein theapplication specific integrated circuit (ASIC) die comprises a pluralityof dice.